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Updated: Jan 25, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
A colloidal quantum dot infrared photodetector and its use for intraband detection
Clément Livache1,2, Bertille Martinez1,2, Nicolas Goubet1,2
1Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005, Paris, France.
Abstract:
Wavefunction engineering using intraband transition is the most versatile strategy for the design of infrared devices. To date, this strategy is nevertheless limited to epitaxially grown semiconductors, which lead to prohibitive costs for many applications. Meanwhile, colloidal nanocrystals have gained a high level of maturity from a material perspective and now achieve a broad spectral tunability. Here, we demonstrate that the energy landscape of quantum well and quantum dot infrared photodetectors can be mimicked from a mixture of mercury selenide and mercury telluride nanocrystals. This metamaterial combines intraband absorption with enhanced transport properties (i.e. low dark current, fast time response and large thermal activation energy). We also integrate this material into a photodiode with the highest infrared detection performances reported for an intraband-based nanocrystal device. This work demonstrates that the concept of wavefunction engineering at the device scale can now be applied for the design of complex colloidal nanocrystal-based devices.
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Dot Product
In engineering, the dot product of any two vectors is the product of the magnitudes of the vectors and the cosine of the angle between them. It is denoted by a dot symbol between the two vectors.
Consider a vehicle pulling an object along the ground using a rope. If the rope makes an angle with the horizontal axis, the work done can be calculated using the dot product of the force applied and the object's displacement.
The dot...

