Nonlayered Two-Dimensional Defective Semiconductor γ-Ga₂S₃ toward Broadband Photodetection

Two-dimensional (2D) materials exhibit high sensitivity to structural defects due to the nature of interface-type materials, and the corresponding structural defects can effectively modulate their inherent properties in turn, giving them a wide application range in high-performance and functional devices. 2D γ-Ga₂S₃ is a defective semiconductor with outstanding optoelectronic properties. However, its controllable preparation has not been implemented yet, which hinders exploring its potential applications. In this work, we introduce nonlayered γ-Ga₂S₃ into the 2D materials family, which was successfully synthesized via the space-confined chemical vapor deposition method. Its intriguing defective structure are revealed by high-resolution transmission electron microscopy and temperature-dependent cathodoluminescence spectra, which endow the γ-Ga₂S₃-based device with a broad photoresponse from the ultraviolet to near-infrared region and excellent photoelectric conversion capability. Simultaneously, the device also exhibits excellent ultraviolet detection ability ( R_λ = 61.3 A W^-1, I_on /I_off = 851, EQE = 2.17× 10⁴ %, D* = 1.52× 10¹⁰ Jones @350 nm), and relatively fast response (15 ms). This work provides a feasible way to fabricate ultrathin nonlayered materials and explore the potential applications of a 2D defective semiconductor in high-performance broadband photodetection, which also suggests a promising future of defect creation in optimizing photoelectric properties.