Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Heat Capacities of an Ideal Gas III01:25

Heat Capacities of an Ideal Gas III

3.3K
The number of independent ways a gas molecule can move along straight line, rotate, and vibrate is called its degrees of freedom. Supposing d represents the number of degrees of freedom of an ideal gas, the molar heat capacity at constant volume of an ideal gas in terms of d is
3.3K
Semiconductors01:22

Semiconductors

1.4K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.4K
Types of Semiconductors01:20

Types of Semiconductors

1.4K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.4K
Crossing Over01:34

Crossing Over

169.6K
Unlike mitosis, meiosis aims for genetic diversity in its creation of haploid gametes. Dividing germ cells first begin this process in prophase I, where each chromosome—replicated in S phase—is now composed of two sister chromatids (identical copies) joined centrally.
The homologous pairs of sister chromosomes—one from the maternal and one from the paternal genome—then begin to align alongside each other lengthwise, matching corresponding DNA positions in a process...
169.6K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

935
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
935
Work Done Over an Inclined Plane01:11

Work Done Over an Inclined Plane

3.9K
The center-of-mass framework helps to easily describe the work done on rigid bodies. Since the internal forces in a rigid body do no work, they can be ignored, and the external forces can be considered in the work-energy theorem.
The work done by gravity to move a rigid body, or the work done by an opposing force to move a rigid body against gravity, can be calculated using the center-of-mass framework. It is the line integral of the force of gravity over the path, considered positive if...
3.9K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Impact of Porosity and Boundary Scattering on Thermal Transport in Diameter-Modulated Nanowires.

ACS applied materials & interfaces·2021
Same author

Backscattering limit of nanoscale heat conduction.

Journal of physics. Condensed matter : an Institute of Physics journal·2021
Same author

Phononic pathways towards rational design of nanowire heat conduction.

Nanotechnology·2019
Same author

Enhancing Thermal Transport in Layered Nanomaterials.

Scientific reports·2018
Same author

Phonon Surface Scattering and Thermal Energy Distribution in Superlattices.

Scientific reports·2017
Same author

Impact of Phonon Surface Scattering on Thermal Energy Distribution of Si and SiGe Nanowires.

Scientific reports·2016

Related Experiment Video

Updated: Jan 25, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.4K

Cross-plane heat conduction in III-V semiconductor superlattices.

Kartik Kothari1, Abhinav Malhotra2, Martin Maldovan1,2

  • 1School of Physics, Georgia Institute of Technology, Atlanta, GA, United States of America.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|May 15, 2019
PubMed
Summary

This study analyzes heat conduction in III-V semiconductor superlattices, crucial for optoelectronic devices. It reveals how material structure impacts thermal properties, guiding better device design.

More Related Videos

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
07:38

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method

Published on: April 18, 2019

34.2K
A Modular Microfluidic Technology for Systematic Studies of Colloidal Semiconductor Nanocrystals
09:58

A Modular Microfluidic Technology for Systematic Studies of Colloidal Semiconductor Nanocrystals

Published on: May 10, 2018

10.0K

Related Experiment Videos

Last Updated: Jan 25, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.4K
Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
07:38

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method

Published on: April 18, 2019

34.2K
A Modular Microfluidic Technology for Systematic Studies of Colloidal Semiconductor Nanocrystals
09:58

A Modular Microfluidic Technology for Systematic Studies of Colloidal Semiconductor Nanocrystals

Published on: May 10, 2018

10.0K

Area of Science:

  • Materials Science
  • Solid State Physics
  • Nanotechnology

Background:

  • Effective thermal management is vital for III-V semiconductor superlattice optoelectronic devices.
  • Understanding thermal transport properties is key to optimizing device performance and reliability.

Purpose of the Study:

  • To conduct a rigorous physical analysis of cross-plane thermal conduction in GaAs/AlAs and alloy-based superlattices.
  • To investigate the influence of phonon interlayer coupling and interfacial structure on thermal transport.
  • To provide insights into the anisotropic thermal properties of these superlattices.

Main Methods:

  • Detailed physical analysis of cross-plane thermal conduction.
  • Accounting for phonon interlayer coupling and interfacial structural characteristics.
  • Comprehensive study of superlattice thermal transport, including structure-property relations and spectral/modal descriptions.
  • Contrast between cross-plane and in-plane heat conduction.

Main Results:

  • Established structure-property relations for superlattice thermal transport.
  • Provided spectral and modal descriptions of heat conduction.
  • Explained the anisotropy in III-V semiconductor superlattices by contrasting cross-plane and in-plane heat conduction.
  • Highlighted the impact of phonon coupling and interface structure on thermal behavior.

Conclusions:

  • The study offers key physical insights into the thermal transport mechanisms in III-V semiconductor superlattices.
  • Results facilitate rational material design for effective thermal modulation in optoelectronic devices.
  • Understanding thermal anisotropy is crucial for advanced device engineering.