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Batch-Fabricated α-Si Assisted Nanogap Tunneling Junctions.

Aishwaryadev Banerjee1, Shakir-Ul Haque Khan2, Samuel Broadbent3

  • 1Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT 84112, USA. devaash88@gmail.com.

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|May 15, 2019
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Summary

Highly uniform vertical nanogap tunneling junctions were fabricated for biosensing. These devices utilize sidewall etching to create precise nano-scale gaps between electrodes, enabling sensitive detection.

Keywords:
IOTbatch fabricationbio-sensinggold adhesionmolecular junctionsnanogap electrodesprotein detectionquantum tunnelingα-Si

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Area of Science:

  • Nanotechnology
  • Materials Science
  • Electrical Engineering

Background:

  • Development of sensitive biosensors requires precise control over nanoscale device fabrication.
  • Tunneling junctions offer high sensitivity for detecting minute biological or chemical changes.

Purpose of the Study:

  • To design, fabricate, and characterize highly uniform, batch-fabricated sidewall etched vertical nanogap tunneling junctions.
  • To evaluate the suitability of these junctions for bio-sensing applications.

Main Methods:

  • Utilized sputtered alpha-silicon (α-Si) and Atomic Layer Deposited (ALD) silicon dioxide (SiO2) as sacrificial spacer layers.
  • Employed controlled dry etching to create ~10 nm air-gaps along the sidewall of the spacer.
  • Fabricated nanogap electrodes with varying overlap areas and spacer gaps (~4.0 nm to ~9.0 nm).

Main Results:

  • Achieved high uniformity in nanogap fabrication with average non-uniformity of 0.46 nm in SiO2 and 0.56 nm in α-Si.
  • Determined the barrier potential of the spacer stack to be ~3.5 eV using tunneling measurements.
  • Measured a maximum resistance of 46 × 10^3 GΩ and an average dielectric breakdown field of ~11 MV/cm.

Conclusions:

  • Demonstrated a reliable method for batch fabrication of uniform vertical nanogap tunneling junctions.
  • The characterized devices show promise for high-performance bio-sensing applications due to their precise nanogap control and electrical properties.