Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer.

Area of Science:

• Materials Science
• Electrical Engineering
• Semiconductor Physics

Background:

• Capacitive non-volatile flash memories are crucial in semiconductor electronics.
• Creating intrinsic traps in dielectric layers typically requires high-temperature processing.
• Optimizing leakage current and intrinsic trap density simultaneously remains a significant challenge.

Purpose of the Study:

• To develop a tunable flash memory device that eliminates the need for tunneling and blocking layers.
• To achieve high intrinsic charge trap density and low leakage current in solution-derived dielectric films.
• To demonstrate systematic tuning of memory storage capacity.

Main Methods:

• Utilizing solution-derived, inorganic, spin-coated dielectric films.
• Employing low-temperature processing, with heating at 200°C or below.
• Controlling intrinsic trap density by adjusting heating temperature.

Main Results:

• Achieved high intrinsic charge trap density exceeding 10^12 cm^-2.
• Maintained low leakage current below 10^-7 A cm^-2.
• Demonstrated systematic tuning of memory storage capacity up to 96%.

Conclusions:

• A novel tunable flash memory device without tunneling and blocking layers has been successfully demonstrated.
• Solution-derived dielectric films processed at low temperatures offer a promising pathway for advanced memory devices.
• The ability to tune trap density provides a method for controlling memory storage capacity.