Gate-based high fidelity spin readout in a CMOS device

The engineering of a compact qubit unit cell that embeds all quantum functionalities is mandatory for large-scale integration. In addition, these functionalities should present the lowest error rate possible to successfully implement quantum error correction protocols¹. Electron spins in silicon quantum dots are particularly promising because of their high control fidelity^2-5 and their potential compatibility with complementary metal-oxide-semiconductor industrial platforms^6,7. However, an efficient and scalable spin readout scheme is still missing. Here we demonstrate a high fidelity and robust spin readout based on gate reflectometry in a complementary metal-oxide-semiconductor device that consists of a qubit dot and an ancillary dot coupled to an electron reservoir. This scalable method allows us to read out a spin in a single-shot manner with an average fidelity above 98% for a 0.5 ms integration time. To achieve such a fidelity, we combine radio-frequency gate reflectometry with a latched spin blockade mechanism that requires electron exchange between the ancillary dot and the reservoir. We show that the demonstrated high readout fidelity is fully preserved up to 0.5 K. This result holds particular relevance for the future cointegration of spin qubits and classical control electronics.