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Shear-strain-mediated magnetoelectric effects revealed by imaging
M Ghidini1,2,3, R Mansell4, F Maccherozzi5
1Department of Mathematics, Physics and Computer Science, University of Parma, Parma, Italy. massimo.ghidini@unipr.it.
Shear strains from ferroelectric domain switching were found to influence magnetoelectric effects in nickel films. This discovery impacts the design of future magnetoelectric devices.
Area of Science:
- Condensed matter physics
- Materials science
- Nanotechnology
Background:
- Ferroelectric domain switching can alter ferromagnetic film magnetization via magnetoelectric effects.
- Previous studies focused on specific strain components, neglecting shear strains.
Purpose of the Study:
- To investigate the role of shear strains in magnetoelectric coupling.
- To analyze magnetization changes in nickel films on ferroelectric substrates.
Main Methods:
- Utilized X-ray magnetic circular dichroism (XMCD) with photoemission electron microscopy (PEEM) for high-resolution magnetization mapping.
- Employed vibrating sample magnetometry (VSM) to measure bulk magnetoelectric effects.
- Fabricated a polycrystalline nickel film on a 0.68Pb(Mg1/3Nb2/3)O3-0.32PbTiO3 substrate in the pseudo-cubic (011)pc orientation.
Main Results:
- Confirmed the presence of shear strains accompanying ferroelectric domain switching.
- Observed local magnetization rotations deviating from the expected 90°, ranging from 62° to 84°.
- Discrepancy between VSM-indicated giant effects and PEEM-observed smaller local rotations.
Conclusions:
- Shear strain is a critical, previously overlooked factor in magnetoelectric coupling.
- The non-orthogonal magnetization rotation presents challenges and opportunities for miniaturizing magnetoelectric devices.
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