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Quantum spin Hall (QSH) edge modes are robust against sample disorder but susceptible to contact disorder. This study reveals that disordered contacts introduce quantum localization corrections to transport properties in N-terminal QSH samples.

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Area of Science:

  • Condensed Matter Physics
  • Topological Materials
  • Quantum Transport

Background:

  • Quantum spin Hall (QSH) edge modes are helical and theoretically immune to backscattering from non-magnetic impurities within the sample.
  • This robustness leads to quantized resistances and vanishing Hall resistance, even with intrinsic sample disorder.
  • However, the effect of disorder at the sample contacts has not been fully explored.

Purpose of the Study:

  • To investigate the impact of contact disorder on transport properties in N-terminal Quantum Spin Hall (QSH) samples.
  • To quantify the deviation from ideal transport behavior caused by disordered contacts.
  • To analyze the dependence of this deviation on contact disorder and the number of terminals.

Main Methods:

  • Theoretical analysis of transport in N-terminal QSH systems with disordered contacts.
  • Derivation of the quantum localization correction term for various resistances.
  • Examination of the influence of inelastic scattering on the localization correction.

Main Results:

  • Disordered contacts introduce a significant quantum localization correction to all resistances in N-terminal QSH samples.
  • This correction increases with the degree of contact disorder.
  • The quantum localization correction decreases as the number of terminals (N) increases.
  • Inelastic scattering can completely suppress the observed quantum localization correction.

Conclusions:

  • Contact disorder is a critical factor affecting transport in QSH systems, unlike intrinsic sample disorder.
  • The number of terminals and inelastic scattering are key parameters that can mitigate or eliminate localization effects.
  • Understanding contact disorder is essential for the practical application of QSH devices.