Anomalous Electron Dynamics Induced through the Valley Magnetic Domain: A Pathway to Valleytronic Current Processing

Area of Science:

• Condensed Matter Physics
• Materials Science
• Nanotechnology

Background:

• Valleytronics utilizes electron valley properties for information processing.
• Monolayer MoS₂ exhibits unique electronic properties exploitable for valleytronics.
• Controlling valley polarization is crucial for realizing valleytronic devices.

Purpose of the Study:

• To explore the interplay between applied strain and Berry curvature in monolayer MoS₂.
• To explain the observed valley magnetoelectric effect and introduce the concept of valley magnetic domains (VMDs).
• To investigate anomalous electron dynamics and transverse current manipulation within VMDs.

Main Methods:

• Theoretical exploration of Berry curvature reconstruction in uniaxially strained monolayer MoS₂.
• Analysis of valley magnetization under an external electric field.
• Investigation of electron dynamics and transverse current generation in the presence of VMDs.

Main Results:

• Uniaxial strain induces unbalanced Berry curvatures, leading to valley magnetization.
• The study explains the valley magnetoelectric effect and introduces Valley Magnetic Domains (VMDs).
• Anomalous electron dynamics and tunable transverse currents are achieved through VMD activation and manipulation.

Conclusions:

• VMDs provide a pathway for stable, valley-polarized carriers essential for valleytronics.
• Manipulation of VMDs allows for control of anomalous transverse currents, enabling signal processing functionalities.
• The concept of VMDs offers new physical insights and potential device applications in valleytronics.