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Modulating phase by metasurfaces with gated ultra-thin TiN films
Huan Jiang1, Harsha Reddy, Deesha Shah
1Institute of Modern Optics, Department of Physics, Harbin Institute of Technology, Harbin 150001, China. jiangyy@hit.edu.cn.
Nanoscale
|June 1, 2019
Summary
This study demonstrates deep phase modulation using a tunable titanium nitride (TiN) film in a hybrid metasurface. Active control of light flow is achieved with potential applications in photonics.
Area of Science:
- Photonics and optical engineering
- Metamaterials science
- Nanotechnology
Background:
- Active control of light is crucial for optical information processing, telecommunications, and imaging.
- Metasurfaces offer unique light manipulation capabilities but often lack dynamic tunability.
Purpose of the Study:
- To numerically demonstrate deep phase modulation (PM) in an electrically tunable hybrid metasurface.
- To explore the use of titanium nitride (TiN) film's carrier density for active light control.
Main Methods:
- Utilizing a 1 nm titanium nitride (TiN) film with tunable carrier density.
- Designing a gold strip/TiN film hybrid metasurface.
- Performing numerical simulations to analyze phase modulation performance.
Main Results:
- Achieved 337° phase modulation at 1.550 μm with a 3% carrier density change in TiN.
- Demonstrated a continuous 180° phase modulation at 1.537 μm via gate voltage bias.
- Showcased the tunability of the hybrid metasurface for active light control.
Conclusions:
- The proposed active metasurface enables deep phase modulation near 1.550 μm.
- This technology holds significant potential for active beam steering, dynamic holography, and reconfigurable photonic devices.
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