Three-dimensional thermal model of high-power semiconductor lasers

Area of Science:

• Optics and Photonics
• Thermal Engineering
• Semiconductor Devices

Background:

• Accurate thermal modeling is crucial for high-power semiconductor lasers (SEs) and laser diode arrays (LDAs).
• Understanding heat conduction in multi-layered laser structures is essential for device performance and longevity.

Purpose of the Study:

• To derive 3-D, steady-state, analytical thermal models for SEs and LDAs.
• To analyze heat flow within laser chips and submounts.
• To validate the models using finite element simulations and experimental measurements.

Main Methods:

• Development of analytical thermal models for heat conduction in multi-layered laser structures.
• Analysis of heat flow in epi-down bonded SEs and LDAs.
• Finite element simulations for accuracy validation, especially with non-ideal submounts.
• Experimental verification using the wavelength shift method.

Main Results:

• The derived analytical models accurately describe heat flow in laser chips, contributing 8% (SE) and 6% (LDA) to total heat dissipation.
• The models provide insights into submount size requirements based on heat flow.
• Model accuracy was confirmed for lasers with non-ideal submounts.

Conclusions:

• The proposed analytical thermal models offer a reliable method for analyzing heat dissipation in high-power SEs and LDAs.
• The models are validated by both numerical simulations and experimental data.
• This work contributes to the design and optimization of thermal management in semiconductor laser devices.