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Updated: Jan 24, 2026

Niobium Oxide Films Deposited by Reactive Sputtering: Effect of Oxygen Flow Rate
Published on: September 28, 2019
Tuning the Doping Ratio and Phase Transition Temperature of VO2 Thin Film by Dual-Target Co-Sputtering
Xu Chen1,2, Mingfei Wu3,4, Xingxing Liu5
1School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China. cxzhixin0211@163.com.
Abstract:
A new simple way for tuning the phase transition temperature (PTT) of VO2 thin films has been proposed to solve the problem of changing the doping ratio by using the dual-target co-sputtering method. A series of samples with W doping ratios of 0%, 0.5%, 1%, 1.5% and 2% have been fabricated by sputtering V films with the power of pure and 2% W-doped V targets from 500 W: 0 W, 500 W: 250 W, 500 W: 500 W, 250 W: 500 W to 0 W: 500 W respectively and then annealed in an oxygen atmosphere to form VO2. The XRD results of both pure and W-doped VO2 samples reveal that VO2 forms and is the main component after annealing. The PTT can be tuned by controlling the sputtering power ratio of the pure and doped targets. It can be tuned easily from 64.3 °C to 36.5 °C by using the pure and 2% W-doped targets for demonstration, with W doping ratios from 0% to 2%. It is also valid for other doping elements and is a promising approach for the large-scale production of sputtering.
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