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GaAs Q-switched Nd:CNGG lasers: operating at 4F3/2 → 2I11/2 and 4F3/2 → 2I13/2 transitions
Abstract:
The nonlinear absorption properties of GaAs were measured at 1.06 and 1.34 µm by the open aperture Z-scan technique in this paper. Based on a neodymium doped calcium niobium gallium garnet (Nd:CNGG) disordered crystal grown by the Czochralski method, passively Q-switched lasers with the conventional GaAs wafer as the saturable absorber were demonstrated, operating on the transitions of 4F3/2 → 2I11/2 and 4F3/2 → 2I13/2. For the 4F3/2 → 2I11/2 transition, the laser operated at 1063 nm with a pulse duration of 546 ns and a repetition rate of 98.5 kHz. While for the 4F3/2 → 2I13/2 transition operating at 1340 nm, the minimum pulse width was 499.6 ns with the pulse repetition rate of 110.7 kHz.
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