Self-assembled nano-dots structures on Si(111) surfaces by oblique angle sputter-deposition

Controlled surface modification and nano-dots structures over Si(111) surfaces have been produced by oblique angle sputter deposition of 80 keV Ar⁺ beam. Temporal parameters such as self-assemble, tunability of size and density of fabricated nano-dots exhibit distinct fluence dependence. Crystalline to amorphous (c/a) phase transition for sputter deposited Si(111) surfaces has been observed. RBS/C reveals the non-linear response of damage distribution with Ar ion fluence. Compositional alterations like degree of amorphization, damage distribution and depth profiling of Ar in these nano-structured surfaces has been correlated with the morphological and structural findings. The underlying self-organization mechanism relies in ion beam sputtering induced erosion and re-deposition of Si atoms thereby leading to mass transport inside the amorphous layers. Such nano-structured Si(111) surfaces could be applied as key engineering substrates for surface reconstruction, optoelectronic devices, data storage devices, recording media and photovoltaic applications.