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Field Effect Transistor01:29

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Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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Ionic radius is the measure used to describe the size of an ion. A cation always has fewer electrons and the same number of protons as the parent atom; it is smaller than the atom from which it is derived. For example, the covalent radius of an aluminum atom (1s22s22p63s23p1) is 118 pm, whereas the ionic radius of an Al3+ (1s22s22p6) is 68 pm. As electrons are removed from the outer valence shell, the remaining core electrons occupying smaller shells experience a greater effective nuclear...
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The addition of an inert ionic compound increases the solubility of a sparingly soluble salt. For example, adding potassium nitrate to a saturated solution of calcium sulfate significantly enhances the solubility of calcium sulfate. Le Châtelier's principle cannot predict this shift in the equilibrium. Instead, this could be explained in terms of changes in the effective concentration of the ions in solution in the presence of added inert salt.
In this solution, the primary...
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Overview
When atoms gain or lose electrons to achieve a more stable electron configuration they form ions. Ionic bonds are electrostatic attractions between ions with opposite charges. Ionic compounds are rigid and brittle when solid and may dissociate into their constituent ions in water. Covalent compounds, by contrast, remain intact unless a chemical reaction breaks them.
Opposing Charges Hold Ions Together in Ionic Compounds
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Solubility is the measure of the maximum amount of solute that can be dissolved in a given quantity of solvent at a given temperature and pressure. Solubility is usually measured in molarity (M) or moles per liter (mol/L). A compound is termed soluble if it dissolves in water.
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Ionic liquid thin layer-induced memory effects in organic field-effect transistors.

Keitaro Eguchi1, Michio M Matsushita1, Kunio Awaga1

  • 1Department of Chemistry and Integrated Research Consortium on Chemical Science (IRCCS), Nagoya Univeristy, Furo-cho, Chikusa-ku, 464-8602 Nagoya, Japan. keitaro.eguchi@tum.de awaga@mbox.chem.nagoya-u.ac.jp.

Physical Chemistry Chemical Physics : PCCP
|June 7, 2019
PubMed
Summary
This summary is machine-generated.

Ionic liquid layers influence organic semiconductor thin films. This study shows how N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide (DEME-TFSI) layers in organic field-effect transistors (OFETs) can create hysteresis for transistor memory applications.

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Area of Science:

  • Materials Science
  • Organic Electronics
  • Surface Science

Background:

  • Organic field-effect transistors (OFETs) are crucial for flexible electronics.
  • Controlling interfacial properties is key to optimizing OFET performance.
  • Ionic liquids offer unique properties for modifying semiconductor interfaces.

Purpose of the Study:

  • To investigate the impact of ionic liquid (DEME-TFSI) thin film thickness on pentacene and C60 morphologies.
  • To fabricate and characterize OFETs incorporating DEME-TFSI layers.
  • To explore the potential of DEME-TFSI for creating hysteresis in OFETs for memory applications.

Main Methods:

  • Thin film growth of pentacene and C60 on varying thicknesses of DEME-TFSI.
  • Fabrication of OFET devices with DEME-TFSI as an interfacial layer.
  • In situ performance measurements of OFETs, including transfer characteristics.
  • Analysis of hysteresis loop curvature and memory effects.

Main Results:

  • Film morphology and structure of pentacene and C60 are dependent on DEME-TFSI thickness.
  • 1.5-2 ML of DEME-TFSI induced significant hysteresis in OFET transfer characteristics.
  • 5 ML of DEME-TFSI resulted in normally-on states with reduced memory effects.
  • Hysteresis was attributed to trap states formed by the DEME-TFSI layers.

Conclusions:

  • DEME-TFSI thin layers significantly influence the properties of pentacene and C60 films.
  • The thickness of DEME-TFSI layers can be used to tune OFET characteristics, including hysteresis.
  • This method offers a simple approach for generating hysteresis in OFETs, applicable to transistor memory devices.