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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
All-Microwave Control and Dispersive Readout of Gate-Defined Quantum Dot Qubits in Circuit Quantum Electrodynamics
P Scarlino1, D J van Woerkom1, A Stockklauser1
1Department of Physics, ETH Zurich, CH-8093 Zurich, Switzerland.
Abstract:
Developing fast and accurate control and readout techniques is an important challenge in quantum information processing with semiconductor qubits. Here, we study the dynamics and the coherence properties of a GaAs/AlGaAs double quantum dot charge qubit strongly coupled to a frequency-tunable high-impedance resonator. We drive qubit transitions with synthesized microwave pulses and perform qubit readout through the state-dependent frequency shift imparted by the qubit on the dispersively coupled resonator. We perform Rabi oscillation, Ramsey fringe, energy relaxation, and Hahn-echo measurements and find significantly reduced decoherence rates down to γ_{2}/2π∼3 MHz corresponding to coherence times of up to T_{2}∼50 ns for charge states in gate-defined quantum dot qubits. We realize Rabi π pulses of width down to σ∼0.25 ns.
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