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Updated: Jan 23, 2026

Electrochemical Etching and Characterization of Sharp Field Emission Points for Electron Impact Ionization
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Performance-Enhanced 365 nm UV LEDs with Electrochemically Etched Nanoporous AlGaN Distributed Bragg Reflectors

Xingdong Lu1,2, Jing Li3,4, Kang Su5,6

  • 1Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. luxingdong@semi.ac.cn.

Nanomaterials (Basel, Switzerland)
|June 9, 2019
PubMed

Keywords:
365 nm UV LEDDBR-LEDelectrically pumpednanoporous AlGaN DBRsidewall protection layertwo-step etching

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