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Updated: Jan 23, 2026
10:40
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
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Flexible Memristors Based on Single-Crystalline Ferroelectric Tunnel Junctions
Zheng-Dong Luo1, Jonathan J P Peters1, Ana M Sanchez1
1Department of Physics , University of Warwick , CV4 7AL , Coventry , United Kingdom.
ACS Applied Materials & Interfaces
|June 11, 2019
Summary
Researchers developed flexible ferroelectric tunnel junction (FTJ) memristors on plastic substrates. These novel devices offer high-speed, low-voltage operation for advanced memory and neuromorphic computing applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Ferroelectric tunnel junction (FTJ) memristors show promise for high-density memory and neuromorphic computing.
- Current fabrication methods using rigid substrates and high temperatures limit applications in flexible electronics.
Purpose of the Study:
- To develop centimeter-scale single crystalline FTJs on flexible plastic substrates.
- To demonstrate the feasibility of flexible FTJ-based memristors for advanced electronic applications.
Main Methods:
- Epitaxial oxide membrane lift-off using water-etching.
- Transfer of single crystalline FTJ membranes onto flexible plastic substrates.
Main Results:
- Successful integration of centimeter-scale single crystalline FTJs on flexible plastic.
- Flexible FTJ membranes retained single-crystalline structure and ferroelectric polarization.
- Demonstrated high-speed, low-voltage memristive behavior with >500% resistance change.
- Memristors showed stability against shape change.
Conclusions:
- This work enables the realization of flexible electronics using epitaxial ultrathin ferroelectric oxide films.
- The developed flexible FTJ memristors are suitable for large-area, affordable, and flexible computing devices.
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