Light enhanced low-voltage nonvolatile memory based on all-inorganic perovskite quantum dots

Area of Science:

• Materials Science
• Nanotechnology
• Solid-State Electronics

Background:

• Nonvolatile memory devices are crucial for data storage.
• Low operating voltages and high retention are key challenges in memory technology.
• Perovskite quantum dots (QDs) offer unique optoelectronic properties for advanced applications.

Purpose of the Study:

• To develop a light-enhanced nonvolatile memory device.
• To utilize all-inorganic perovskite quantum dots (QDs) and silver nanoparticles (NPs).
• To achieve low-voltage operation and high data retention.

Main Methods:

• Fabrication of a memory device with CsPbBr3 QDs as the semiconductor and Ag NPs as the floating gate.
• Investigation of photo-induced carrier generation in QDs and trapping in NPs under UV light and electric fields.
• Characterization of memory characteristics, including memory window (ΔVth) and retention time.

Main Results:

• The device demonstrated light-enhanced memory operation with a significantly larger memory window (ΔVth) at low programming/erasing voltages (±5 V).
• The memory window (ΔVth) showed strong dependence on the applied bias voltage (VDS).
• Excellent data retention was observed, with 79.3% of the memory window remaining after 10^5 s at VDS = 1.4 V.

Conclusions:

• Combining QDs with metal NPs offers a facile approach for trapping photo-induced charges.
• The developed memory device achieves reduced operating voltages and enhanced performance.
• This work presents a promising strategy for next-generation nonvolatile memory technologies.