Related Experiment Video
Updated: Jan 23, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Measurement of Diffusion and Segregation in Semiconductor Quantum Dots and Quantum Wells by Transmission Electron
1Kroto Centre for High Resolution Imaging & Analysis, Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield S3 7HQ, UK. t.walther@sheffield.ac.uk.
Abstract:
Strategies are discussed to distinguish interdiffusion and segregation and to measure key parameters such as diffusivities and segregation lengths in semiconductor quantum dots and quantum wells by electron microscopy methods. Spectroscopic methods are usually necessary when the materials systems are complex while imaging methods may suffice for binary or simple ternary compounds where atomic intermixing is restricted to one type of sub-lattice. The emphasis on methodology should assist microscopists in evaluating and quantifying signals from electron micrographs and related spectroscopic data. Examples presented include CdS/ZnS core/shell particles and SiGe, InGaAs and InGaN quantum wells.
More Related Videos
11:16Correlative Light- and Electron Microscopy Using Quantum Dot Nanoparticles
Published on: August 7, 2016
08:13Visualizing Subcellular Localization of a Protein in the Heart Using Quantum Dots-Mediated Immuno-Labeling Followed by Transmission Electron Microscopy
Published on: September 16, 2022
Related Concept Videos
Quantum Numbers
The Quantum-Mechanical Model of an Atom
Transmission Electron Microscopy
Electron Affinity
2D NMR: Heteronuclear Single-Quantum Correlation Spectroscopy (HSQC)
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...