ZnO-Controlled Growth of Monolayer WS2 through Chemical Vapor Deposition
Zhuhua Xu1, Yanfei Lv2, Feng Huang3
1College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, China. zhuhuaxu@hdu.edu.cn.
Abstract:
Monolayer tungsten disulfide (2D WS2) films have attracted tremendous interest due to their unique electronic and optoelectronic properties. However, the controlled growth of monolayer WS2 is still challenging. In this paper, we report a novel method to grow WS2 through chemical vapor deposition (CVD) with ZnO crystalline whisker as a growth promoter, where partially evaporated WS2 reacts with ZnO to form ZnWO4 by-product. As a result, a depletion region of W atoms and S-rich region is formed which is favorable for subsequent monolayer growth of WS2, selectively positioned on the silicon oxide substrate after the CVD growth.
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