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Published on: August 15, 2014
Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches
R Meija1, A I Livshits1, J Kosmaca1
1Institute of Chemical Physics, University of Latvia, Latvia.
Abstract:
Electrostatically actuated nanobeam-based electromechanical switches have shown promise for versatile novel applications, such as low power devices. However, their widespread use is restricted due to poor reliability resulting from high jump-in voltages. This article reports a new method for lowering the jump-in voltage by inducing mechanical oscillations in the active element during the switching ON process, reducing the jump-in voltage by more than three times. Ge0.91Sn0.09 alloy and Bi2Se3 nanowire-based nanoelectromechanical switches were constructed in situ to demonstrate the operation principles and advantages of the proposed method.
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