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Visualization and investigation of the non-thermalized electrons in an InAs nanowire by scanning gate microscopy
A A Zhukov1, Ch Volk2,3, A Winden2,3
1Institute of Solid State Physics, Russian Academy of Science, Chernogolovka, 142432, Russia.
Abstract:
We performed scanning gate microscopy measurements on an InAs nanowire at T = 4.2 K in an external magnetic field. We visualizeded non-thermalized electrons passed under narrow metallic contact. It was found that, for such kind of electrons, suppression of the weak antilocalization quantum correction occurs with a magnetic field at least three times smaller than the corresponding one measured for the whole electronic system of the wire.
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