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Optimization of surface passivation parameters in [147Pm]-Si planar p-n junction betavoltaic based on analytical 1-D

Swastya Rahastama1, Abdul Waris2, Sparisoma Viridi2

  • 1Department of Physics, Institut Teknologi Bandung, Jalan Ganesha 10, Bandung, Indonesia.

Applied Radiation and Isotopes : Including Data, Instrumentation and Methods for Use in Agriculture, Industry and Medicine
|June 24, 2019
PubMed

Keywords:
BetavoltaicElectron-hole pairsMaximum power outputMinority carrier diffusion equationSurface recombination velocity

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