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Updated: Jan 23, 2026

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
Published on: February 1, 2022
The evolution of surface cleanness and electronic properties of graphene field-effect transistors during mechanical
Do-Hyun Park1, Young Jin Cho1, Jun-Ho Lee1
1Department of Physics, Konkuk University, Seoul 05030, Republic of Korea.
Abstract:
The evolution of surface cleanliness and the electronic properties-Dirac voltage(V Dirac), hysteresis and mobility (μ) of a graphene field-effect transistor (GFET)-were monitored by measuring lateral force microscopy and drain current (I D) as a function of gate voltage (V G), after mechanically cleaning the surface, scan-by-scan, with contact-mode atomic force microscopy. Both the surface cleanliness and the electronic properties evolved, showing a sudden improvement and then saturation for a mobility of around 2200 cm2 V-1 s-1. We found that the mobility suppression of the as-fabricated GFET deviated from a randomly distributed impurities model, which predicted a greater mobility than obtained from the measured V Dirac. Therefore, the substrate impurities are excluded from the origins of the extraordinary suppression of the mobility, and the possible origin will be discussed.
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