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Updated: Jan 22, 2026

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
Published on: April 21, 2016
High-speed black phosphorus field-effect transistors approaching ballistic limit
Xuefei Li1, Zhuoqing Yu2, Xiong Xiong1
1Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
Abstract:
As a strong candidate for future electronics, atomically thin black phosphorus (BP) has attracted great attention in recent years because of its tunable bandgap and high carrier mobility. Here, we show that the transport properties of BP device under high electric field can be improved greatly by the interface engineering of high-quality HfLaO dielectrics and transport orientation. By designing the device channels along the lower effective mass armchair direction, a record-high drive current up to 1.2 mA/μm at 300 K and 1.6 mA/μm at 20 K can be achieved in a 100-nm back-gated BP transistor, surpassing any two-dimensional semiconductor transistors reported to date. The highest hole saturation velocity of 1.5 × 107 cm/s is also achieved at room temperature. Ballistic transport shows a record-high 36 and 79% ballistic efficiency at room temperature and 20 K, respectively, which is also further verified by theoretical simulations.
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