Remote Gating of Schottky Barrier for Transistors and Their Vertical Integration

This paper introduces a strategy to modulate a Schottky barrier formed at a graphene-semiconductor heterojunction. The modulation is performed by controlling the work function of graphene from a gate that is placed laterally away from the graphene-semiconductor junction, which we refer to as the remote gating of a Schottky barrier. The remote gating relies on the sensitive work function of graphene, whose local variation induced by locally applied field effect affects the change in the work function of the entire material. Using Kelvin probe force microscopy analysis, we directly visualize how this local variation in the work function propagates through graphene. These properties of graphene are exploited to assemble remote-gated vertical Schottky barrier transistors (v-SBTs) in an unconventional device architecture. Furthermore, a vertical complementary circuit is fabricated by simply stacking two remote-gated v-SBTs (pentacene layer as the p-channel and indium gallium zinc oxide layer as the n-channel) vertically. We consider that the remote gating of graphene and the associated device architecture presented herein facilitate the extendibility of graphene-based v-SBTs in the vertical assembly of logic circuits.