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A Wide Dynamic Range CMOS Image Sensor with a Charge Splitting Gate and Two Storage Diodes
Minho Lee1, Min-Woong Seo2, Juyeong Kim1
1Graduate School of Science and Technology, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan.
Sensors (Basel, Switzerland)
|July 3, 2019
Summary
This study presents a wide dynamic range (WDR) CMOS image sensor (CIS) using a charge splitting gate (SG) to mitigate motion artifacts. The novel design achieves high dynamic range imaging with flexible control and reduced motion blur.
Area of Science:
- Electrical Engineering
- Image Sensor Technology
- Computer Vision
Background:
- Wide dynamic range (WDR) imaging is crucial for capturing scenes with extreme lighting variations.
- Conventional WDR techniques often suffer from motion artifacts due to differing exposure times.
- CMOS image sensors (CIS) are widely used but require advanced designs for high dynamic range performance.
Purpose of the Study:
- To introduce a novel WDR CMOS image sensor (CIS) design.
- To demonstrate a method for mitigating motion artifacts in WDR imaging.
- To achieve flexible dynamic range control in image sensors.
Main Methods:
- Implementation of a CIS with a charge splitting gate (SG) and two storage diodes (SDs).
- Utilizing SG on/off control to alternate photocurrent paths to SD1 and SD2 during exposure.
- Generating two sensitivity signals from a single photodiode (PD) by varying the SG off-time to on-time ratio.
Main Results:
- An experimental WDR CIS with a 280x406 pixel array was fabricated and tested.
- Demonstrated dynamic ranges (DR) of 93 dB and 104 dB with SG on/off ratios of 30 and 279, respectively.
- Experimentally confirmed significant reduction in motion artifacts.
Conclusions:
- The proposed WDR CIS design effectively mitigates motion artifacts.
- The SG technique offers flexible and precise control over the dynamic range.
- This technology advances WDR imaging capabilities for various applications.
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