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Investigation of Plasma Activated Si-Si Bonded Interface by Infrared Image Based on Combination of Spatial Domain and

Mao Du1,2, Dongling Li3,4, Yufei Liu5,6

  • 1Key Laboratory of Optoelectronic Technology and System of the Education Ministry of China, Chongqing University, Chongqing 400030, China.

Micromachines
|July 5, 2019
PubMed

Keywords:
infrared imageorthogonal experimentsilicon direct bondingspatial domain and morphologyvoid characteristics

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