Related Experiment Video
Updated: Jan 22, 2026

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
Published on: January 21, 2016
Tuning the magnetotransport behavior of topological insulator with a transition-metal oxide layer
Liyang Liao1, Peng Chen2, Xufeng Kou2
1Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China.
Abstract:
The interaction between topological insulator (TI) and its adjacent magnetic layer serves as a basis for exploring the device application of TI. Here we investigate the modulation of the magnetotransport behavior of Bi2Te3 TI with a transition-metal oxide layer NiO. It is found that the weak-antilocalization effect is absent at low magnetic fields and the magnetoresistance ratio decreases monotonically with increasing the NiO growth temperature from 300 to 473 K, indicating the suppression of the topological surface states of Bi2Te3. Such behaviors are attributed to the decomposition of NiO and the concomitant formation of magnetic impurities at the Bi2Te3/NiO interface. Differently, the weak-antilocalization shows no significant weakening with the growth of Cr2O3 top layer, due to its better chemical stability. Our observation would be significant for the material selection for the device integration of TI.
Related Concept Videos
Properties of Transition Metals
Insulation Coordination
Conductors and Insulators
Most metals are conductors. Their atomic configuration is such that one or more electron(s) are loosely bound to the nucleus in each atom. Thus, a sea of mobile electrons are available in them, known as free electrons. Their easy...
Phase Transitions
Oxidation Numbers
Alkali Metals
Table 1: Properties of the alkali metals

