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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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Dynamical Metal to Charge-Density-Wave Junctions in an Atomic Wire Array.

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|July 6, 2019
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Summary
This summary is machine-generated.

We explored atomic-scale electronic phase separation in In atomic wires on Si(111). Metal-insulator junctions show strong anisotropy, tunable by impurities, revealing dynamical junction formation.

Keywords:
Atomic wirecharge-density-waveelectronic phase separationmetal−insulator junctionscanning tunneling microscopy/spectroscopy

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Area of Science:

  • Surface science
  • Condensed matter physics
  • Materials science

Background:

  • Quasi-1D charge-density-wave (CDW) states exhibit complex electronic properties.
  • Atomic scale electronic phase separation is crucial for understanding material behavior.

Purpose of the Study:

  • Investigate atomic-scale electronic phase separation in In atomic wires on Si(111).
  • Quantify spatial variations in CDW gap and amplitude at metal-insulator interfaces.
  • Determine the anisotropy and tunability of these junctions.

Main Methods:

  • Scanning tunneling microscopy and spectroscopy (STS) to probe CDW properties.
  • Analysis of interfaces between metallic and insulating CDW domains.
  • Density functional theory (DFT) calculations for theoretical insights.

Main Results:

  • Quantified spatial variations of CDW gap and amplitude.
  • Revealed strong anisotropy in metal-insulator junctions with distinct interwire (0.4 nm) and intrawire (7 nm) lengths.
  • Demonstrated dramatic reduction in intrawire junction length by atomic-scale impurities.

Conclusions:

  • Atomic scale impurities can tune metal-insulator junctions in CDW states.
  • Intrawire junction formation and tunability are dynamical processes.
  • Findings offer insights into controlling electronic properties at the atomic scale.