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Improved Efficiency of Perovskite Light-Emitting Diodes Using a Three-Step Spin-Coated CH3NH3PbBr3 Emitter and a
Yuanming Zhou1, Sijiong Mei2, Dongwei Sun2
1Hubei Key Laboratory for High-efficiency Use of Solar Energy and Operation Control of Energy Storage System, Hubei University of Technology, Wuhan 430068, China. zhouym@mail.hbut.edu.cn.
Abstract:
High efficiency perovskite light-emitting diodes (PeLEDs) using PEDOT:PSS/MoO3-ammonia composite hole transport layers (HTLs) with different MoO3-ammonia ratios were prepared and characterized. For PeLEDs with one-step spin-coated CH3NH3PbBr3 emitter, an optimal MoO3-ammonia volume ratio (0.02) in PEDOT:PSS/MoO3-ammonia composite HTL presented a maximum luminance of 1082 cd/m2 and maximum current efficiency of 0.7 cd/A, which are 82% and 94% higher than those of the control device using pure PEDOT:PSS HTL respectively. It can be explained by that the optimized amount of MoO3-ammonia in the composite HTLs cannot only facilitate hole injection into CH3NH3PbBr3 through reducing the contact barrier, but also suppress the exciton quenching at the HTL/CH3NH3PbBr3 interface. Three-step spin coating method was further used to obtain uniform and dense CH3NH3PbBr3 films, which lead to a maximum luminance of 5044 cd/m2 and maximum current efficiency of 3.12 cd/A, showing enhancement of 750% and 767% compared with the control device respectively. The significantly improved efficiency of PeLEDs using three-step spin-coated CH3NH3PbBr3 film and an optimum PEDOT:PSS/MoO3-ammonia composite HTL can be explained by the enhanced carrier recombination through better hole injection and film morphology optimization, as well as the reduced exciton quenching at HTL/CH3NH3PbBr3 interface. These results present a promising strategy for the device engineering of high efficiency PeLEDs.
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