Nanopores in 2D MoS₂: Defect-Mediated Formation and Density Modulation

Oxidation is a scalable process for introducing nanopores in two-dimensional transitional metal dichalcogenides (TMDs) for membrane applications. The nanopore density is determined by the areal density of their nucleation sites; understanding the nature of the defects and their control would enable tailoring of TMD membranes for targeted applications. In this work, we show that the nanopore distribution is dramatically different in strained and unstrained MoS₂ crystals. We correlate this spatial distribution to the underlying arrangement of dislocations in MoS₂ crystals, in contrast to previously suggested sulfur vacancies. To control the nucleation density of MoS₂ nanopores, we demonstrate that the pore density can be modulated by electron beam exposure prior to the nanopore formation. Raman analysis of electron beam-exposed samples indicates that hydrocarbon adsorption activates defect species other than dislocations, which significantly enhances the nanopore density in MoS₂.