Optoelectronic resistive random access memory for neuromorphic vision sensors.

Feichi Zhou1, Zheng Zhou2, Jiewei Chen1

  • 1Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.

Nature Nanotechnology
|July 17, 2019
PubMed
Summary

Researchers developed simple optoelectronic resistive random access memory (ORRAM) synaptic devices for efficient neuromorphic visual systems. These devices simplify circuitry, reduce power consumption, and improve image recognition for edge computing applications.

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