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Updated: Jan 22, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Charge Detection in Gate-Defined Bilayer Graphene Quantum Dots

Annika Kurzmann1, Hiske Overweg1, Marius Eich1

  • 1Solid State Physics Laboratory , ETH Zürich , CH-8093 Zürich , Switzerland.

Nano Letters
|July 18, 2019
PubMed

Keywords:
Bilayer graphenecharge detectionmultidotsquantum dottunneling

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