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Shape Memory Polymers for Active Cell Culture

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Published on: July 4, 2011

A Universal Strategy for Stretchable Polymer Nonvolatile Memory via Tailoring Nanostructured Surfaces.

Chaoyi Ban¹, Xiangjing Wang¹, Zhe Zhou¹

¹Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.

Scientific Reports

|July 19, 2019

Summary

Researchers developed high-performance stretchable polymer memory using tailored surface morphology. This innovation is key for advanced wearable electronics, offering reliable data storage in flexible devices.

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Area of Science:

Materials Science
Nanotechnology
Electronics Engineering

Background:

Stretchable memory is crucial for next-generation wearable and soft electronics.
Developing high-performance, reliable stretchable memory devices remains a significant challenge.

Purpose of the Study:

To demonstrate a universal strategy for fabricating high-performance stretchable polymer memory.
To investigate the use of tailored surface morphology for enhanced memristive properties.

Main Methods:

Fabrication of stretchable polymer memory devices using conjugated polymers as active layers.
Utilization of sharp reduced graphene oxide (r-rGO) films as conductive electrodes.
Tailoring the surface morphology of the active layers to induce resistive switching behavior.

Main Results:

Achieved write-once-read-many-times (WORM) memory with low switching voltage (1.1 V) and high ON/OFF ratio (10^4).
Demonstrated excellent long retention time (>12000 s) and reliable electrical bistability.
Confirmed reliable performance with up to 30% stretchability.

Conclusions:

The developed strategy offers a promising route for high-performance stretchable polymer memory.
Tailored surface morphology is effective in achieving desirable resistive switching characteristics.
These stretchable polymer memory devices show great potential for applications in soft electronics.