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A two-qubit gate between phosphorus donor electrons in silicon.

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Researchers achieved fast two-qubit exchange gates for phosphorus atom qubits in silicon. This breakthrough enables scalable quantum computing circuits using precisely placed atomic qubits.

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Area of Science:

  • Quantum computing
  • Atomic physics
  • Solid-state physics

Background:

  • Electron spin qubits in silicon offer long coherence times and high-fidelity control.
  • Inter-qubit coupling is crucial for scalable quantum circuits but has been a significant challenge for atom-based qubits.
  • Previous attempts to create tunable exchange interactions between phosphorus donor qubits in silicon have been unsuccessful.

Purpose of the Study:

  • To demonstrate a fast two-qubit exchange gate between phosphorus donor electron spin qubits in silicon.
  • To enable the realization of tunable exchange interactions essential for multi-qubit quantum circuits.
  • To provide a pathway for the efficient characterization of multi-qubit donor qubit systems.

Main Methods:

  • Engineered atomic-scale placement of phosphorus donor qubits in silicon.
  • Implemented a fast two-qubit exchange gate with a duration of approximately 800 picoseconds.
  • Utilized independent single-shot spin readout with a fidelity of approximately 94%.

Main Results:

  • Successfully demonstrated a [Formula: see text] two-qubit exchange gate between phosphorus donor electron spin qubits.
  • Achieved fast gate operations (gigahertz scale) crucial for quantum computation.
  • Established a method for independent single-shot spin readout with high fidelity.

Conclusions:

  • The development of tunable exchange interactions is a critical step towards building scalable quantum computers based on silicon donor qubits.
  • Precise atomic-scale engineering of qubit placement facilitates the creation and characterization of multi-qubit circuits.
  • This work paves the way for advanced quantum information processing using atom-based qubits in silicon.