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Updated: Jan 22, 2026

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Discharge Behavior and Dielectric Breakdown of Oxide Films during Single Pulse Anodizing of Aluminum Micro-Electrodes
Kai Yang1,2, Haisong Huang1, Jiadui Chen1
1Key Laboratory of Advanced Manufacturing Technology of the Ministry of Education, Guizhou University, Guiyang 550025, China.
Abstract:
Micro-arc discharge events and dielectric breakdown of oxide films play an important role in the formation process of plasma electrolytic oxidation coating. Single pulse anodization of micro-electrodes was employed to study the discharge behavior and dielectric breakdown of oxide films deposited on aluminum in an alkaline silicate electrolyte. Voltage and current waveforms of applied pulses were measured and surface morphology of micro-electrodes was characterized from images obtained using scanning electron microscope (SEM). A feasible identification method for the critical breakdown voltage of oxide film was introduced. Different current transients of voltage pulses were obtained, depending on applied pulse voltage and duration. In addition, the active capacitive effect and complex non-linear nature of plasma electrolytic oxidation process is confirmed using dynamic electrical characteristic curves. A good correlation between the pulse parameters and shape of discharge channels was observed. Circular opened pores were found to close with increasing potential and pulse width. Finally, the characteristic parameters of a single discharge event were estimated.
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