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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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Electron-Proton Co-doping-Induced Metal-Insulator Transition in VO2 Film via Surface Self-Assembled l-Ascorbic Acid

Bowen Li1, Liyan Xie2, Zhaowu Wang3

  • 1National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230029, China.

Angewandte Chemie (International Ed. in English)
|July 24, 2019
PubMed

Keywords:
first-principle simulationshydrogenationmetal-insulator phase transitionsynchrotron characterization

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