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Updated: Jan 21, 2026

Surface Functionalization of Metal-Organic Frameworks for Improved Moisture Resistance
Published on: September 5, 2018
Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture
Guangdong Zhou1, Bai Sun, Zhijun Ren
1School of Science, Guizhou institute of Technology, Guiyang 55003, China.
Abstract:
A device with the lateral structure of Ag|MnOx|Ag was developed using a single MnOx nanorod. The device showed a typical resistor property under dry ambience, while it demonstrated the reversion between resistor and memristor under moisture ambience. Memory logic functions including logic gates and displays were feasible under the dual input of electric and moisture signals.
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