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Valley controlled Andreev reflection and valley-switch effect in graphene-based superconducting hybrid structures
1College of Science, Nanjing University of Aeronautics and Astronautics, Jiangsu 210016, People's Republic of China.
Summary
We theoretically investigated Andreev reflection in graphene hybrid structures, controlling it with electron valley degree of freedom. This research explores valleytronics applications in superconducting junctions.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Mechanics
Background:
- Two-dimensional materials possess a valley degree of freedom, enabling valleytronics.
- Graphene-based superconducting hybrid structures allow valley-controlled Andreev reflection (AR).
Purpose of the Study:
- To theoretically investigate Andreev reflection in graphene normal/superconductor junctions.
- To explore the control of AR by valley degree of freedom using staggered potentials and circularly polarized light.
Main Methods:
- Theoretical investigation of AR in graphene normal/superconductor junctions.
- Analysis of conductance spectra under the influence of staggered potentials and off-resonant circularly polarized light.
Main Results:
- Conductances exhibit rich features due to the interplay of staggered potentials and light.
- Retro AR and specular AR are energy-separated when the Fermi level is below the superconducting gap.
- Local AR is suppressed in normal/superconductor/normal junctions, enabling a valley-switch effect with light polarization reversal.
Conclusions:
- Valley degree of freedom offers a unique mechanism for controlling Andreev reflection in graphene superconducting structures.
- The observed phenomena pave the way for novel valleytronic devices.
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