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Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing

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Published on: June 9, 2023

Tuning spinterface properties in iron/fullerene thin films.

Srijani Mallik¹, Amir Syed Mohd, Alexandros Koutsioubas

¹Laboratory for Nanomagnetism and Magnetic Materials (LNMM), School of Physical Sciences, National Institute of Science Education and Research (NISER), HBNI, Jatni-752050, India.

|July 26, 2019

Summary

In ferromagnetic metal/organic semiconductor heterostructures, magnetism is induced at the interface, forming a

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Area of Science:

Spintronics
Materials Science
Condensed Matter Physics

Background:

Ferromagnetic (FM) metal/organic semiconductor (OSC) heterostructures exhibit charge transfer, inducing magnetism in non-magnetic OSCs.
This phenomenon creates a 'spinterface' with a finite magnetic moment at the OSC interface due to altered density of states.

Purpose of the Study:

Investigate the control of spinterface magnetic moment.
Address how FM thickness influences spinterface moment, anisotropy, and magnetization reversal.

Main Methods:

Studied Fe/C60 bilayers with varying Fe thickness on Si substrates.
Analyzed magnetization reversal, domain structure, and anisotropy.
Compared bilayer samples with reference samples lacking C60.

Main Results:

Induced magnetic moment and spinterface thickness increase proportionally with Fe thickness.
Fe layer growth quality on Si (100) substrate explains this behavior.
Spinterface formation reduces uniaxial anisotropy in Fe/C60 compared to reference samples.

Conclusions:

Fe thickness is a critical factor in controlling spinterface properties.
Growth quality of the FM layer significantly impacts spinterface characteristics.
Spinterface formation modifies magnetic anisotropy in FM/OSC heterostructures.