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Published on: May 19, 2014
Dependence of spin-orbit torque effective fields on magnetization uniformity in Ta/Co/Pt structure
Feilong Luo1, Qi Ying Wong1, Sihua Li1
1School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore, 637371, Singapore.
Spin-orbit torque (SOT) effective fields are influenced by magnetization uniformity. Field-like SOT decreases, while damping-like SOT increases with enhanced Co magnetization uniformity in Ta/Co/Pt structures.
Area of Science:
- Spintronics
- Condensed Matter Physics
- Materials Science
Background:
- Spin-orbit torque (SOT) is crucial for spintronic devices.
- SOT effective fields (field-like and damping-like) are known to depend on layer thicknesses in heterostructures.
- Understanding SOT dependence on other material properties is essential for device optimization.
Purpose of the Study:
- To investigate the influence of magnetization uniformity on SOT effective fields.
- To decouple the effect of magnetization uniformity from layer thickness variations.
- To elucidate the role of the spin Hall effect in SOT under varying magnetization uniformity.
Main Methods:
- Fabrication of Ta/Co/Pt wire structures with controlled Co layer magnetization uniformity.
- Concurrent variation of magnetization uniformity and characterization of SOT effective fields.
- Experimental analysis to isolate the impact of magnetization uniformity on field-like and damping-like SOT terms.
Main Results:
- The field-like SOT effective field term decreases as Co magnetization uniformity increases.
- The damping-like SOT effective field term increases with increasing Co magnetization uniformity.
- A clear correlation between magnetization uniformity and SOT effective fields was established, independent of layer thickness.
Conclusions:
- Magnetization uniformity is a critical parameter influencing SOT effective fields in Ta/Co/Pt systems.
- The observed trends are attributed to the spin Hall effect's contribution to SOT.
- This finding provides new insights for engineering SOT in spintronic devices.
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