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Valley Acoustoelectric Effect.

A V Kalameitsev1, V M Kovalev1,2, I G Savenko1,3

  • 1Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk, Russia.

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|July 27, 2019
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Summary
This summary is machine-generated.

Researchers discovered a new valley acoustoelectric effect in 2D materials. This effect generates electric and spin currents using surface acoustic waves, enabling new valleytronic devices.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Mechanics

Background:

  • Valleytronics utilizes electron properties in 2D materials.
  • Acoustoelectric effects involve interactions between sound and charge carriers.
  • Transition metal dichalcogenide monolayers on piezoelectric substrates are key systems.

Purpose of the Study:

  • To report the novel valley acoustoelectric effect.
  • To theoretically describe the emergence of drag electric and spin currents.
  • To propose methods for independent measurement of current components.

Main Methods:

  • Theoretical modeling of electron dynamics in 2D materials under acoustic waves.
  • Analysis of contributions to the acoustoelectric current (valley-independent, trigonal warping, Berry phase).
  • Development of an angular pattern to characterize topological properties.

Main Results:

  • Demonstrated a new valley acoustoelectric effect in 2D materials on piezoelectric substrates.
  • Identified three distinct contributions to the acoustoelectric current.
  • Showcased the generation of currents orthogonal to the acoustic wave vector.
  • Established methods for independent measurement of diffusive, warping, and acoustoelectric valley Hall currents.

Conclusions:

  • The valley acoustoelectric effect offers a new pathway for valley manipulation.
  • Acoustic methods can control valley transport, expanding valleytronics.
  • This research paves the way for novel acoustoelectric valleytronic devices.