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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and

Tao Chen1,2, Degong Ding3, Jia Shi4,5

  • 1School of Physics and Optoelectronics and Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Xiangtan University, Xiangtan 411105, P.R. China.

The Journal of Physical Chemistry Letters
|July 31, 2019
PubMed

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