Correlating dynamic strain and photoluminescence of solid-state defects with stroboscopic x-ray diffraction

S J Whiteley1,2, F J Heremans1,3, G Wolfowicz1,3,4

  • 1Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA.

Nature Communications
|July 31, 2019
PubMed
Summary

Researchers developed a new X-ray microscopy technique to image dynamic strain in semiconductors. This method visualizes how lattice distortions affect optically-active defects, crucial for quantum technologies.

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