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Interfacial Triggering of Conductive Filament Growth in Organic Flexible Memristor for High Reliability and
Sin-Hyung Lee1, Hea-Lim Park1, Min-Hoi Kim2
1School of Electrical Engineering , Seoul National University , 1 Gwanak-ro , Gwanak-ku, Seoul 08826 , Republic of Korea.
Abstract:
We demonstrate the physical pictures of the localization of the conductive filaments (CFs) growth in flexible electrochemical metallization (ECM) memristors through an interfacial triggering (IT) into the polymer electrolyte. The IT sites (ITSs), capable of controlling the pathways of the CF growth, are formed at the electrode-polymer interfaces via the Ostwald ripening at low temperatures (below 230 °C). The injection and migration of metal ions and the resultant CF growth are found to be effectively controlled through the ITSs with the local electric field enhancement. The reliability, uniformity, and switching voltage of the device are much improved by the presence of the ITSs. Our flexible ECM memristor exhibits a high mechanical flexibility and a stable memory performance under repeated bending deformations.
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