An efficient Terahertz rectifier on the graphene/SiC materials platform

Area of Science:

• Terahertz (THz) technology
• Semiconductor device physics
• Materials science

Background:

• Schottky diodes are crucial for detecting electromagnetic radiation.
• Graphene on silicon carbide (SiC) offers unique electronic properties.
• Efficient THz detectors are needed for spectroscopy and imaging.

Purpose of the Study:

• To present an efficient Schottky-diode detection scheme for Terahertz (THz) radiation.
• To implement this scheme using epitaxial graphene on silicon carbide (SiC).
• To characterize the performance of the developed THz detector.

Main Methods:

• Fabrication of Schottky diodes using epitaxial graphene on SiC.
• Characterization of the device's responsivity and frequency response.
• Demonstration of spectroscopic capabilities using ethanol and acetone.

Main Results:

• Broadband operation of the THz detector up to 580 GHz.
• Achieved responsivity of 1.1 A/W, limited by RC circuitry.
• Observed stable voltage dependence of THz responsivity, matching DC characteristics.

Conclusions:

• The graphene/SiC Schottky diode is an efficient THz detector.
• The device's stable performance encourages exploration of higher frequencies.
• The detector can resolve fine spectroscopic features in THz transmission experiments.