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An efficient Terahertz rectifier on the graphene/SiC materials platform.

Maria T Schlecht1, Sascha Preu2, Stefan Malzer1

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We developed a new Terahertz (THz) detector using graphene on silicon carbide (SiC). This efficient Schottky diode shows broadband operation and stable responsivity, enabling detailed THz spectroscopy of chemical samples.

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Area of Science:

  • Terahertz (THz) technology
  • Semiconductor device physics
  • Materials science

Background:

  • Schottky diodes are crucial for detecting electromagnetic radiation.
  • Graphene on silicon carbide (SiC) offers unique electronic properties.
  • Efficient THz detectors are needed for spectroscopy and imaging.

Purpose of the Study:

  • To present an efficient Schottky-diode detection scheme for Terahertz (THz) radiation.
  • To implement this scheme using epitaxial graphene on silicon carbide (SiC).
  • To characterize the performance of the developed THz detector.

Main Methods:

  • Fabrication of Schottky diodes using epitaxial graphene on SiC.
  • Characterization of the device's responsivity and frequency response.
  • Demonstration of spectroscopic capabilities using ethanol and acetone.

Main Results:

  • Broadband operation of the THz detector up to 580 GHz.
  • Achieved responsivity of 1.1 A/W, limited by RC circuitry.
  • Observed stable voltage dependence of THz responsivity, matching DC characteristics.

Conclusions:

  • The graphene/SiC Schottky diode is an efficient THz detector.
  • The device's stable performance encourages exploration of higher frequencies.
  • The detector can resolve fine spectroscopic features in THz transmission experiments.