Influence of Oxygen Partial Pressure on Radio Frequency Magnetron Sputtered Amorphous InZnSnO Thin Film Transistors
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Updated: Jan 21, 2026

Author Spotlight: Advancements in High-Performance Thermoelectric Thin Films Through Radio Frequency Magnetron Sputtering
Published on: May 17, 2024
Annisa Dwi Lestari1, Maryane Putri1, Young-Woo Heo2
1School of Materials Science and Engineering, Yeungnam University, Gyeongsan 38541, Korea.
Abstract:
Amorphous oxide semiconductors (AOS) have been studied extensively for the past decade as a possible alternative to polysilicon thin film transistors (TFTs). One such example is amorphous InZnSnO (IZTO), which was used in this study as an active channel layer for TFTs. A 30 nm-thick IZTO film was deposited using RF magnetron sputtering with various oxygen partial pressures, followed by annealing treatment in air at 350 °C. The resulting films showed good optical properties with high transparency of >85% in the visible spectrum, which is important for realizing transparent devices. The amorphous IZTO TFT device showed good performance with a field-effect mobility (μFE) of 29.1 cm²/Vs, threshold voltage (V) of 0.70 V, on/off current ratio (Ion/Ioff) of ~108, and subthreshold swing (SS) value of 0.12 V/dec. Oxygen incorporation during deposition of the channel layer affected the overall electrical properties of the TFTs, which is associated with the change of interface trap density.
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